Dmn4800lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN4800LSS User Manual
Page 2: Electrical characteristics, Dmn4800lss
DMN4800LSS
Document number: DS31736 Rev. 7 - 2
2 of 6
October 2013
© Diodes Incorporated
DMN4800LSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
25
V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.6
6.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11.8
9.0
A
Maximum Body Diode Forward Current (Note 6)
I
S
2.4 A
Pulsed Drain Current (Note 7)
I
DM
50 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.46
W
T
A
= +70°C
0.9
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
86
°C/W
t<10s 46
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C
1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
75
°C/W
t<10s 40
Thermal Resistance, Junction to Case (Note 6)
R
JC
15
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.8 1.2
1.6 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
11
14
14
20
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transconductance
g
fs
8
S
V
DS
= 10V, I
D
= 9A
Diode Forward Voltage (Note 8)
V
SD
0.72 0.94 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
798
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
128
pF
Reverse Transfer Capacitance
C
rss
122
pF
Gate Resistance
R
G
1.37
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
8.7
nC
V
GS
= 5V, V
DS
= 15V, I
D
= 9A
Gate-Source Charge
Q
gs
1.7
Gate-Drain Charge
Q
gd
2.4
Turn-On Delay Time
t
d(on)
5.03
ns
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15Ω
R
G
= 6.0Ω
I
D
= 1A
Rise Time
t
r
4.50
Turn-Off Delay Time
t
d(off)
26.33
Fall Time
t
f
8.55
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.