Diodes DMN3730UFB4 - Manual (Page 4)

DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
4 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN3730UFB4
A Product Line of
Diodes Incorporated
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
, L
E
AKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
, G
A
TE
-SO
U
RCE
VO
L
T
AG
E (
V
)
GS
V = 15V
I = 1A
DS
D