Diodes DMN3730UFB4 - Manual (Page 2)

DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN3730UFB4
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30
V
Gate-Source Voltage V
GSS
±8
Continuous Drain Current V
GS
= 4.5V
(Note 6)
I D
0.91
A
T
A
= +70°C (Note 6) 0.73
(Note 5) 0.75
Pulsed Drain Current (Note 7) I
DM
3
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
0.69
W
(Note 5) 0.47
Thermal Resistance, Junction to Ambient
(Note 6)
R θJA
180
°C/W
(Note 5) 258
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
30 — — V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current I DSS
— — 1 µA V DS = 30V, V GS = 0V
Gate-Source Leakage I
GSS
— — 3 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
0.45 — 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 8) R
DS(on)
—
—
— —
—
— 460
m Ω
V
GS
= 4.5V, I
D
= 200mA
560 V
GS
= 2.5V, I
D
= 100mA
730 V
GS
= 1.8V, I
D
= 75mA
Forward Transfer Admittance |Y fs | 40 — — mS V DS = 3V, I D = 10mA
Diode Forward Voltage (Note 8) V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C
iss
— 64.3 — pF
V DS = 25V, V GS = 0V,
f = 1.0MHz
Output Capacitance C oss
— 6.1 — pF
Reverse Transfer Capacitance C
rss
— 4.5 — pF
Gate Resistance R
g
— 70 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
— 1.6 — nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
— 0.2 — nC
Gate-Drain Charge Q gd
— 0.2 — nC
Turn-On Delay Time t
D(on)
— 3.5 — ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time t
r
— 2.8 — ns
Turn-Off Delay Time t
D(off)
— 38 — ns
Turn-Off Fall Time t
f
— 13 — ns
Notes: 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
6. Same as note 4, except the device measured at t  10 sec.
7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 s.
8. Measured under pulsed conditions to minimize self-heating effect. Pulse width  300µs; duty cycle  2%
9. For design aid only, not subject to production testing.