Electrical characteristics, Dmn3404l – Diodes DMN3404L User Manual
Page 3
DMN3404L
Document number: DS31787 Rev. 8 - 2
3 of 8
August 2013
© Diodes Incorporated
DMN3404L
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 —
— V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
1.0
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8 )
Gate Threshold Voltage
V
GS(th)
1.0 1.5 2.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance T
J
= -40°C (Note 9)
R
DS(ON)
— 23 27 —
V
GS
= 4.5V, I
D
= 4.8A
—
57 74 —
V
GS
=3V, I
D
=2A
Static Drain-Source On-Resistance T
J
= +25°C
R
DS(ON)
—
24 28
mΩ
V
GS
= 10V, I
D
= 5.8A
—
33 42
V
GS
= 4.5V, I
D
= 4.8A
—
63 82
V
GS
=3V, I
D
=2A
Static Drain-Source On-Resistance T
J
= +85°C (Note 9)
R
DS(ON)
—
71 95 mΩ
V
GS
=3V, I
D
=2A
Forward Transfer Admittance
|Y
fs
|
—
10 — S
V
DS
= 5V, I
D
= 5.8A
Diode Forward Voltage
V
SD
—
0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
—
498 —
pF
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
—
52 —
pF
Reverse Transfer Capacitance
C
rss
—
45 —
pF
Gate Resistance
R
g
—
1.75 2.8 Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 3V)
Q
g
—
3.8 5.3 nC
V
GS
= 3V, V
DS
= 15V, I
D
= 1A
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
5.3 7.5 nC
V
GS
= 10V/4.5V, V
DS
= 15V,
I
D
= 5.8A
Total Gate Charge (V
GS
= 10V)
Q
g
—
11.3 16 nC
Gate-Source Charge
Q
gs
—
1.4 —
nC
Gate-Drain Charge
Q
gd
—
2.1 —
nC
Turn-On Delay Time
t
D(on)
—
3.41 10 ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
Turn-On Rise Time
t
r
—
6.18 13 ns
Turn-Off Delay Time
t
D(off)
—
13.92 28 ns
Turn-Off Fall Time
t
f
—
2.84 10 ns
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and 25°C data. Not subject to production testing
10. Guaranteed by design. Not subject to production testing.
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0
1
2
3
4
5
V
= 2.0V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 8.0V
GS
V
= 2.5V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = -40°C
A
T = 150°C
A
V
= 5V
DS
T = 125°C
A