Diodes DMN32D2LV - Manual (Page 4)

DMN32D2LV
Document number: DS31121 Rev. 7 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN32D2LV
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-75 -50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C°)
A
R
, ST
A
T
IC
DRAI
N
-S
OURCE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
LI
ZED)
DS
(O
N)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
V = 4V
I = 100mA
GS
D
V = 2.5V
I = 20mA
GS
D
V = 1.8V
I = 20mA
GS
D
0
10
20
30
40
50
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
Fig. 10 Typical Capacitance
C
iss
C
oss
C
rss
f = 1 MHz
0.1
1
10
100
1000
10000
0 2 4 6 8 10 12
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.11 Gate-Source Leakage Current vs Voltage
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
GSS
T = 105°C
A
T = 125°C
A
T = 25°C
A
V , GATE-SOURCE VOLTAGE (-V)
GS
Fig.12 Gate-Source Leakage Current vs Voltage
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
GSS
0.1
1
10
100
1000
10000
0 2 4 6 8 10 12
T = 105°C
A
T = 125°C
A
T = 25°C
A