Diodes DMN32D2LV - Manual

DMN32D2LV
Document number: DS31121 Rev. 7 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
 Dual N-Channel MOSFET
 Low On-Resistance
 Very Low Gate Threshold Voltage, 1.2V max
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 ESD Protected Gate
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
 Case: SOT-563
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
 Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
DMN32D2LV-7 SOT-563 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-563
TOP VIEW
Schematic and Transistor Diagram
TOP VIEW
S
1
D
1
D
2
S
2
G
1
G
2
ESD PROTECTED
DV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
DV YM
S
1
D
2
G
1
D
1
S
2
G
2