Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN32D2LFB4 User Manual
Page 2: Dmn32d2lfb4
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
2 of 5
June 2013
© Diodes Incorporated
DMN32D2LFB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Drain Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
10
V
Drain Current (Note 5)
I
D
300 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5) @T
A
= 25°C
P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
ΘJA
357
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 10
A
Zero Gate Voltage Drain Current
@ T
C
= +25°C
I
DSS
1
A
V
DS
= 30V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
500
A
nA
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.6
1.2 V
V
DS
= V
GS
, I
D
= 250
A
Static Drain-Source On-Resistance
R
DS (ON)
2.2
1.5
1.2
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 2.5V, I
D
= 20mA
V
GS
= 4.0V, I
D
= 100mA
Forward Transconductance
|Y
fs
|
100
mS
V
DS
=10V, I
D
= 0.1A
Source-Drain Diode Forward Voltage
V
SD
0.5
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
39 78 pF
V
DS
= 3V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
10 20 pF
Reverse Transfer Capacitance
C
rss
3.6 7.2 pF
Switching Time
Turn-on Time
t
on
11 22 nS
V
DD
= 5V, I
D
= 10mA,
V
GS
= 0-5V
Turn-off Time
t
off
51 102 nS
Notes:
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.