Dmn31d5ufz – Diodes DMN31D5UFZ User Manual
Page 4
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
4 of 6
June 2014
© Diodes Incorporated
DMN31D5UFZ
NEW PROD
UC
T
ADVANCED INFORMATION
NEW PROD
UC
T
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.3
0.6
0.9
1.2
1.5
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
1
10
100
0
5
10
15
20
25
30
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
0
2
4
6
8
10
0
0.1 0.2
0.3 0.4 0.5 0.6
0.7 0.8 0.9
V
= 15V
I =
A
DS
D
200m
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(
t)
, T
R
A
N
S
IE
N
T T
H
E
R
M
A
L
R
E
S
IS
TA
N
C
E
R
(t) = r(t) * R
R
= 313°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.01
0.1
1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000