Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3190LDW User Manual
Page 2
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
2 of 5
September 2013
© Diodes Incorporated
DMN3190LDW
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1000
900
mA
T < 5s
T
A
= +25°C
T
A
= +70°C
I
D
1300
1000
mA
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle=1%)
I
DM
2.0 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.32
W
T
A
= +70°C
0.19
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
395
°C/W
T < 5s
320
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.4
W
T
A
= +70°C
0.25
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
320
°C/W
T < 5s
250
Thermal Resistance, Junction to Case
R
θJC
143
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current @T
C
= +25°C
I
DSS
—
—
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10
μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.5 — 2.8 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
122 190
mΩ
V
GS
= 10V, I
D
= 1.3A
—
181 335
V
GS
= 4.5V, I
D
= 290mA
Forward Transfer Admittance
|Y
fs
|
—
0.7 — mS
V
DS
= 10V, I
D
= 250mA
Diode Forward Voltage
V
SD
—
— 1.2 V
V
GS
= 0V, I
S
= 250mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
87 —
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
17 —
pF
Reverse Transfer Capacitance
C
rss
—
12 —
pF
Gate Resistance
R
g
—
69.8 —
Ω
f = 1MHz , V
GS
= 0V, V
DS
= 0V
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
0.9 —
nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge (V
GS
= 10V)
Q
g
—
2.0 —
nC
Gate-Source Charge
Q
gs
—
0.3 —
nC
Gate-Drain Charge
Q
gd
—
0.3 —
nC
Turn-On Delay Time
t
D(on)
—
4.5 —
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 10Ω, I
D
= 100mA
Turn-On Rise Time
t
r
—
8.9 —
ns
Turn-Off Delay Time
t
D(off)
—
30.3 —
ns
Turn-Off Fall Time
t
f
—
15.6 —
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.