Diodes DMN3135LVT - Manual (Page 4)

DMN3135LVT
Document number: DS35408 Rev. 6 - 2
4 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN3135LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V
, G
A
TE T
HRE
SHO
L
D
VO
L
T
AG
E(
V
)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
2
2.4
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
T = 25 C
A
°
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0 5 10 15 20 25 30
f = 1MHz
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
0.1
1
10
100
1000
10000
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
T =150°C
A
T =125°C
A
T =85°C
A
T =25°C
A
T =-55°C
A
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V
,
G
A
T
E
-S
O
URC
E VO
L
T
AG
E
(
V
)
GS
0 2 4 6 8 10
0
20
40
60
80
100
0.00001 0.001 0.1 10 1,000
t1, Pulse Duration Time (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
P
,
P
EA
K
T
R
ANS
IEN
T
P
O
WE
R
(W
)
(p
k
)
Single Pulse
R
= 157 C/W θJA
°
R = R * r
(t) (t) θ θ JA JA
T -T = P * R
J A θJA(t)