Diodes DMN3135LVT - Manual (Page 2)

DMN3135LVT
Document number: DS35408 Rev. 6 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN3135LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@ T A = 25°C unless otherwise stated
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V GSS
±20 V
Continuous Drain Current (Note 6) V GS = 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
3.5
2.7
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
4.3
3.3
A
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.8
2.1
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
3.4
2.6
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%)
I DM
25 A
Maximum Body Diode Forward Current (Note 5) I
S
1.5 A
Thermal Characteristics
@ T A = 25°C unless otherwise stated
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P D
0.84 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
155
°C/W
t<10s 109
Total Power Dissipation (Note 6) P
D
1.27 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
102
°C/W t<10s 72
Thermal Resistance, Junction to Case (Note 6) R θJC 34
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
@ T A = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
- - 1.0 µA V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.3 1.8 2.2 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
35
54 60
100
m Ω
V
GS
= 10V, I
D
= 3.1A
V
GS
= 4.5V, I
D
= 2A
Forward Transfer Admittance |Y fs | - 4 - S V DS = 5V, I D = 3.1A
Diode Forward Voltage V
SD
- 0.8 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 305 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 40 -
Reverse Transfer Capacitance C
rss
- 40 -
Gate Resistance R
g
- 1.4 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 4.1 -
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 3.1A
Total Gate Charge Q
g
- 9.0 -
V DS = 15V, V GS = 10V, I D = 3.1A Gate-Source Charge Q gs
- 1.2 -
Gate-Drain Charge Q
gd
- 1.5 -
Turn-On Delay Time t
D(on)
- 2.6 -
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 4.7 Ω
Turn-On Rise Time t r
- 4.6 -
Turn-Off Delay Time t
D(off)
- 13.1 -
Turn-Off Fall Time t
f
- 2.5 -
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.