Dmn3053l new prod uc t, Dmn3053l – Diodes DMN3053L User Manual
Page 4
DMN3053L
Document number: DS36883 Rev. 2 - 2
4 of 6
April 2014
© Diodes Incorporated
DMN3053L
NEW PROD
UC
T
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.3
0.6
0.9
1.2
1.5
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
10
100
1000
10000
0
5
10
15
20
25
30
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
V
= 15V
I = A
DS
D
4
V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.01
0.1
1
10
100
0.1
1
10
100
Rds(on)
Limited
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T
= 150C
T = 25C
V
= 4.5V
Single Pulse
DUT on 1 * MRP Board
J(MAX)
A
GS