Diodes DMN3053L - Manual (Page 2)

DMN3053L
Document number: DS36883 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3053L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.0
3.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
35 A
Maximum Body Diode Forward Current (Note 6) I
S
1.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.76
W
T
A
= +70°C 0.48
Thermal Resistance, Junction to Ambient (Note 5)
Steady state R
θJA
165 °C/W
t<10s R
θJA
114 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state R
θJA
100 °C/W
t<10s R
θJA
69 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 30V, V
GS
= 0V
Gate-Body Leakage I
GSS
  ±10 µA V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6  1.4 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)

36
38
42
44 45
50
53
55
mΩ
V
GS
= 10V, I
D
= 4.0A
V
GS
= 4.5V, I
D
=3.5A
V
GS
= 3.0V, I
D
=3.0A
V
GS
= 2.5V, I
D
=2.8A
Source-Drain Diode Forward Voltage V
SD
 0.7 1.2 V V
GS
= 0V, I
S
= 1.25A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 676  pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 54  pF
Reverse Transfer Capacitance C
rss
 42  pF
Gate Resistance R
g
 15.5   V
DS
= V
GS
= 0V,f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
 7.3  nC
V
DS
= 15V, I
D
= 4A
Total Gate Charge (V
GS
= 10V) Q
g
 17.2  nC
Gate-Source Charge Q
gs
 1.2  nC
Gate-Drain Charge Q
gd
 0.9  nC
Turn-On Delay Time t
D(on)
 2.0  ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 15Ω, R
G
= 6Ω
Turn-On Rise Time t
r
 5.5  ns
Turn-Off Delay Time t
D(off)
 152  ns
Turn-Off Fall Time t
f
 32  ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.