Diodes DMN3065LW - Manual (Page 4)

DMN3065LW
Document number: DS36078 Rev. 5 - 2
4 of 5
www.diodes.com
April 2014
© Diodes Incorporated
DMN3065LW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
-50 -25 0 25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(
A
)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
f = 1MHz
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 2 4 6 8 10 12
V = 15V
I = A
DS
D
4
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
A
M
J
L D
B C
H
K
G