Dmn3032le new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN3032LE User Manual
Page 2: Electrical characteristics, Dmn3032le
DMN3032LE
Document number: DS36695 Rev. 2 - 2
2 of 6
May 2014
© Diodes Incorporated
DMN3032LE
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
5.6
4.1
A
T
C
= +25°C
T
C
= +70°C
I
D
15.4
12.1
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
1.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
25 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
69 °C/W
Total Power Dissipation (Note 5)
P
D
14 W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
8.7 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
—
— V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
— — 1 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 — 2 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
—
22 29
mΩ
V
GS
= 10V, I
D
= 3.2A
—
27 35
V
GS
= 4.5V, I
D
= 2.8A
Forward Transfer Admittance
|Y
fs
|
—
7 — S
V
DS
= 5V, I
D
= 5.8A
Diode Forward Voltage
V
SD
—
0.7 1.5 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 498 —
pF
V
DS
= 15V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
— 52 —
Reverse Transfer Capacitance
C
rss
— 45 —
Gate Resistnace
R
g
— 2.2 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 11.3 —
nC
V
DS
= 15V, V
GS
= 10V, I
D
= 5.8A
Gate-Source Charge
Q
gs
— 1.4 —
Gate-Drain Charge
Q
gd
— 2.1 —
Turn-On Delay Time
t
D(on)
— 2.3 —
ns
V
DS
= 15V, V
GS
= 10V,
R
L
= 2.6
Ω, R
G
= 3
Ω
Turn-On Rise Time
t
r
— 3.9 —
Turn-Off Delay Time
t
D(off)
— 10 —
Turn-Off Fall Time
t
f
— 1.9 —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.