Diodes DMN3025LSS - Manual (Page 4)

DMN3025LSS
Document number: DS35746 Rev. 3 - 2
4 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMN3025LSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E
GS
(T
H
)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7 Gate Threshold Variation vs. Ambient Temperature
I = 250µA
D
I = 1mA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0.1
1
10
100
1000
10000
0 10 20 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
I
, DRAIN L
E
A
KAGE CURR
ENT
(
n
A)
DS
S
T = 125°C
A
T = 150°C
A
T = 85°C
A
T = 25°C
A
10000
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
f = 1MHz
1000
100
10
C
iss
C
oss
C
rss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
g
0
2
4
6
8
10
0 2 4 6 8 10 12 14
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V =15
I = 10A
DS
D