Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3025LSS User Manual
Page 2
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
2 of 6
January 2013
© Diodes Incorporated
DMN3025LSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.2
5.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
9.6
7.7
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
3 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
40 A
Avalanche Current (L = 0.1mH)
I
AS
14.5 A
Repetitive Avalanche Energy (L = 0.1mH)
E
AS
10.5 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.4
W
T
A
= +70°C
0.9
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
87
°C/W
t<10s 44
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
73
°C/W
t<10s 37
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
—
— V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
— — 1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±1
μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 - 2.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
14 20
mΩ
V
GS
= 10V, I
D
= 10A
—
23 31
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance
|Y
fs
|
—
11 - S
V
DS
= 5V, I
D
= 10A
Diode Forward Voltage
V
SD
—
0.70 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
641
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
66
—
Reverse Transfer Capacitance
C
rss
—
50
—
Gate resistance
R
g
—
2.2
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
6
—
nC
V
DS
= 15V, I
D
= 10A
Total Gate Charge (V
GS
= 10V)
Q
g
—
13.2
—
Gate-Source Charge
Q
gs
—
1.7
—
Gate-Drain Charge
Q
gd
—
2.2
—
Turn-On Delay Time
t
D(on)
—
3.3
—
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 1A
Turn-On Rise Time
t
r
—
4.4
—
Turn-Off Delay Time
t
D(off)
—
22.3
—
Turn-Off Fall Time
t
f
—
5.3
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.