Diodes DMN3025LFG - Manual (Page 4)

POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
4 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
NEW PROD
UC
T
0.005
0.015
0.025
0.035
0.010
0.020
0.030
0.040
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N
)
Ω
V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.0
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
10
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C
iss
C
oss
C
rss
f = 1MHz
0 2 4 6 8 10 12
V
G
A
T
E
THRE
SHO
LD VO
LT
AG
E (
V
)
GS
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V = 15V
I = A
DS
D
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = 25°C
J(max)
A
Single Pulse
DC