Diodes DMN3025LFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
7.5
6.1
A
t<10s
T
A
= +25 °C
T
A
= +70 °C
I
D
10
7.8
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
60 A
Avalanche Current (Note 6) L = 0.1mH I
AR
14 A
Avalanche Energy (Note 6) L = 0.1mH E
AR
10 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.0
W
T
A
= +70°C 1.3
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
61
°C/W t < 10s 37
Thermal Resistance, Junction to Case R
θJC
6.4
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 — 2.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 14 18
mΩ
V
GS
= 10V, I
D
= 7.8A
— 23 28 V
GS
= 4.5V, I
D
= 7.0A
Forward Transfer Admittance |Y
fs
| — 9 - S V
DS
= 10V, I
D
= 7.8A
Diode Forward Voltage V
SD
— 0.70 1.0 V V
GS
= 0V, I
S
= 6.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 605 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 74 —
Reverse Transfer Capacitance C
rss
— 58 —
Gate resistance R
g
— 1.5 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.3 —
nC V
DS
= 15V, I
D
= 7.8A
Total Gate Charge (V
GS
= 10V) Q
g
— 11.6 —
Gate-Source Charge Q
gs
— 2 —
Gate-Drain Charge Q
gd
— 2.4 —
Turn-On Delay Time t
D(on)
— 3.8 —
ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 2.4Ω, R
G
= 1Ω,
Turn-On Rise Time t
r
— 4.1 —
Turn-Off Delay Time t
D(off)
— 17.9 —
Turn-Off Fall Time t
f
— 4.7 —
Reverse Recovery Time t
rr
— 5.5 — ns
I
F
= 12A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 2.6 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.