Dmn3024lss, Maximum ratings, Thermal characteristics – Diodes DMN3024LSS User Manual
Page 2
DMN3024LSS
Document Revision: 3
2 of 8
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSS
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
30 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 3)
I
D
8.5
A
T
A
= 70°C (Note 3)
6.8
(Note 2)
6.4
Pulsed Drain current
V
GS
= 10V
(Note 4)
I
DM
36 A
Continuous Source current (Body diode)
(Note 3)
I
S
4.5 A
Pulsed Source current (Body diode)
(Note 4)
I
SM
36 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
1.6
12.5
W
mW/
°C
(Note 3)
2.8
22.2
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
80
°C/W
(Note 3)
45
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
35
°C/W
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.