Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3018SSD User Manual
Page 2
DMN3018SSD
Document number: DS35583 Rev. 3 - 2
2 of 6
January 2013
© Diodes Incorporated
DMN3018SSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.7
5.3
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
8.7
6.9
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
60 A
Maximum Body Diode continuous Current
I
S
2.0 A
Avalanche Current (Note 6) L = 0.1mH
I
AR
19 A
Repetitive Avalanche Energy (Note 6) L = 0.1mH
E
AR
18 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
83 °C/W
t < 10s
50
°C/W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
14.5 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
— — 1 μA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 1.7 2.1 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
— 16 22
mΩ
V
GS
= 10V, I
D
= 10A
— 23 30
V
GS
= 4.5V, I
D
= 6A
Forward Transfer Admittance
|Y
fs
|
— 8.3 — S
V
DS
= 5V, I
D
= 6.9A
Diode Forward Voltage
V
SD
0.5 — 1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 697 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 97 —
Reverse Transfer Capacitance
C
rss
— 67 —
Gate resistance
R
g
— 1.47 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 6.0 —
nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 9A
Total Gate Charge (V
GS
= 10V)
Q
g
— 13.2 —
Gate-Source Charge
Q
gs
— 2.2 —
Gate-Drain Charge
Q
gd
— 1.8 —
Turn-On Delay Time
t
D(on)
— 4.3 —
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 15Ω, I
D
= 1A, R
G
= 6Ω
Turn-On Rise Time
t
r
— 4.4 —
Turn-Off Delay Time
t
D(off)
— 20.1 —
Turn-Off Fall Time
t
f
— 4.1 —
Reverse Recovery Time
t
rr
— 7.3 — ns
I
F
= 9A, di/dt = 500A/μs
Reverse Recovery Charge
Q
rr
— 7.9 — nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.