Diodes DMN3010LK3 - Manual (Page 4)

DMN3010LK3
Document number: DS36762 Rev. 2 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3010LK3
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N
)

V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
TE THRE
SHOL
D VO
LT
AG
E
(
V
)
GS
(t
h
)
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
C
iss
f = 1MHz
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
V = 15V
I = A
DS
D
18