Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3010LK3 User Manual
Page 2
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
2 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
43
34
A
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
13.1
10.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
90 A
Avalanche Current (Notes 7) L = 0.1mH
I
AR
28 A
Avalanche Energy (Notes 7) L = 0.1mH
E
AR
40 mJ
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.6 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
78 °C/W
t<10s 31
°C/W
Total Power Dissipation (Note 6)
P
D
2.4 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
51 °C/W
t<10s 21
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
θJC
4.7 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
—
—
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 2.5 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
8 9.5
mΩ
V
GS
= 10V, I
D
= 18A
—
10 11.5
V
GS
= 4.5V, I
D
= 16A
Diode Forward Voltage
V
SD
—
0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
2075 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
190
—
Reverse Transfer Capacitance
C
rss
—
138
—
Gate resistance
R
g
—
2.4
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
16.1
—
nC
V
DS
= 15V, I
D
= 18A
Total Gate Charge (V
GS
= 10V)
Q
g
—
37
—
Gate-Source Charge
Q
gs
—
6.1
—
Gate-Drain Charge
Q
gd
—
5.9
—
Turn-On Delay Time
t
D(on)
—
4.5
—
ns
V
DS
= 15V, V
GS
= 10V,
R
L
= 0.83Ω, R
GEN
= 3Ω,
Turn-On Rise Time
t
r
—
19.6
—
Turn-Off Delay Time
t
D(off)
—
31
—
Turn-Off Fall Time
t
f
—
10.7
—
Reverse Recovery Time
t
rr
—
13.7
—
ns
I
F
=15A, di/dt=500A/µs
Reverse Recovery Charge
Q
rr
—
18.3 —
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.