Diodes DMN3010LSS - Manual (Page 3)

DMN3010LSS
Document number: DS31259 Rev. 6 - 2
3 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DMN3010LSS
NEW PROD
UC
T
Fig. 3 Drain-Source On-Resistance vs. Drain Current
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN CURRENT (A)
D
R
, ST
A
T
IC
DRAIN
-S
OURCE
ON
-R
E
S
IS
T
A
N
C
E
(m
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 4 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V = 4.5V
I = 10A
GS
D
V = 10V
I = 16A
GS
D
R
, S
T
A
T
IC
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESIS
T
ANCE (
N
O
R
M
A
L
IZ
E
D)
DS
(O
N)
C,
CAP
A
CIT
A
NCE (
p
F
)
Fig. 5 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
-50 -25 0 25 50 75 100 125 150
1
1.3
1.6
1.9
2.2
2.5
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
Fig. 7 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A