Diodes DMN2600UFB - Manual (Page 4)

DMN2600UFB
Document number: DS31983 Rev. 4 - 2
4 of 6
www.diodes.com
March 2011
© Diodes Incorporated
DMN2600UFB
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE TH
RE
SHO
L
D VO
L
T
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
2.0
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
V = 15V
I = 1A
DS
D