Diodes DMN2600UFB - Manual (Page 2)

DMN2600UFB
Document number: DS31983 Rev. 4 - 2
2 of 6
www.diodes.com
March 2011
© Diodes Incorporated
DMN2600UFB
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
25 V
Gate-Source Voltage V GSS
±8 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
1.3
0.9
A
Pulsed Drain Current I
DM
3.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
0.54 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R θJA 234 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
25 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1 μA
V
DS
= 25V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.45 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- -
350
mΩ
V
GS
= 4.5V, I
D
= 200mA
450 V
GS
= 2.5V, I
D
= 100mA
600 V
GS
= 1.8V, I
D
= 75mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 200mA
Diode Forward Voltage V SD
- - 1.2 V V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 70.13 - pF
V DS = 15V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 7.56 - pF
Reverse Transfer Capacitance C
rss
- 5.59 - pF
Gate Resistance R
g
- 72.3 - Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 0.85 - nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
- 0.16 - nC
Gate-Drain Charge Q
gd
- 0.11 - nC
Turn-On Delay Time t D(on)
- 4.1 - ns
V
DS
= 15V, R
L
=15Ω
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time t
r
- 11.5 - ns
Turn-Off Delay Time t
D(off)
- 34.8 - ns
Turn-Off Fall Time t f
- 20.9 - ns
Notes: 4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.