Diodes DMN3007LSS - Manual (Page 3)

DMN3007LSS
Document number: DS31460 Rev. 5 - 2
3 of 5
www.diodes.com
April 2010
© Diodes Incorporated
DMN3007LSS
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
4
5
6
7
8
9
10
11
12
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
m
)
DS
(O
N)
Ω
3
2
1
0
V = 4.5V
GS
V = 10V
GS
4
6
8
10
12
14
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
m
)
DS
(O
N
)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
O
N
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.4
0.8
1.2
1.6
2.0
2.4
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
3
6
9
12
15
18
21
24
27
30
Fig. 7 Diode Forward Voltage vs. Current
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
100
1,000
10,000
Fig. 8 Typical Total Capacitance
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss