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Electrical characteristics, Dmg7702sfg – Diodes DMG7702SFG User Manual

Page 4

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DMG7702SFG

Document number: DS35248 Rev. 6 - 2

4 of 8

www.diodes.com

July 2012

© Diodes Incorporated

DMG7702SFG





Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

- -

100

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

1.0 1.5 2.5 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

- 7.3 10

m

V

GS

= 10V, I

D

= 13.5A

- 10 15

V

GS

= 4.5V, I

D

= 11A

Forward Transfer Admittance

|Y

fs

|

- 22 - S

V

DS

= 5V, I

D

= 10.0A

Diode Forward Voltage

V

SD

- 0.45

0.55 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

- 1296

4310

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 415 - pF

Reverse Transfer Capacitance

C

rss

- 204 - pF

Gate Resistance

R

g

0.26 1.6 2.7

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge V

GS

= 4.5V

Q

g

- 14.7 - nC

V

DS

= 15V, V

GS

= 10V, I

D

= 13.5A

Total Gate Charge V

GS

= 10V

Q

g

- 31.6 - nC

Gate-Source Charge

Q

gs

- 3.5 - nC

Gate-Drain Charge

Q

gd

- 5.0 - nC

Turn-On Delay Time

t

D(on)

- 15.8 - ns

V

GS

= 10V, V

DS

= 15V,

R

G

= 3

Ω, I

D

= 8.8A

Turn-On Rise Time

t

r

- 27.8 - ns

Turn-Off Delay Time

t

D(off)

- 29.7 - ns

Turn-Off Fall Time

t

f

- 13.6 - ns

Reverse Recovery Time

t

rr

- 13.1 - ns

I

F

= 13.5A, di/dt = 100A/

μs

Reverse Recovery Charge

Q

rr

- 4.3 - nC

I

F

= 13.5A, di/dt = 100A/

μs

Notes:

8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.









0

0.5

1.0

1.5

2.0

Fig. 4 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

5

V

= 2.0V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 4.0V

GS

V

= 2.5V

GS

1.0

1.5

2.0

2.5

3.0

Fig. 5 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 85°C

GS

V

= 125°C

GS

V

= 25°C

GS

V

= -55°C

GS

V

= 150°C

GS

V

= 5V

DS