Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG7408SFG User Manual
Page 2
POWERDI is a registered trademark of Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 5 - 2
2 of 6
June 2012
© Diodes Incorporated
DMG7408SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
7.0
5.5
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
9.5
7.5
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
6.0
5.7
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
8.0
6.3
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
66 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
3.0 A
Avalanche Current (Note 7)
I
AS
9 A
Avalanche Energy (Note 7)
E
AS
12 mJ
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
131 °C/W
t<10s 72
°C/W
Total Power Dissipation (Note 6)
P
D
2.1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
63 °C/W
t<10s 35
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
θJC
7.1 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
- - 1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 1.45 2.4 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
-
15
25
23
33
mΩ
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance
|Y
fs
|
- 11 - S
V
DS
= 5V, I
D
= 10A
Diode Forward Voltage
V
SD
- 0.72 1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 478.9 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 96.7 - pF
Reverse Transfer Capacitance
C
rss
- 61.4 - pF
Gate Resistance
R
g
0.4 1.1 1.6 Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
- 5.0 8
nC
V
DS
= 15V,I
D
= 10A
Total Gate Charge (V
GS
= 10V)
Q
g
- 10.5 17
Gate-Source Charge
Q
gs
- 1.8 - nC
Gate-Drain Charge
Q
gd
- 1.6 - nC
Turn-On Delay Time
t
D(on)
- 2.9 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3
Ω, R
L
= 1.5
Ω
Turn-On Rise Time
t
r
- 7.9 - ns
Turn-Off Delay Time
t
D(off)
- 14.6 - ns
Turn-Off Fall Time
t
f
- 3.1 - ns
Notes: 5.
R
θJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L = 0.3mH, TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.