Diodes DMG6402LVT - Manual (Page 4)

DMG6402LVT
Document number: DS35831 Rev. 3 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRESHO
L
D VO
LT
A
G
E
(
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0 2 4 6 8 10
Fig. 10 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E
(V
)
GS
8
V = 15V
I = 5.8A
DS
D
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
r(
t)
, TRANS
IENT THERM
A
L RESI
ST
ANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
1
R (t) = r(t) * R
JA
R = 54°C/W
Duty Cycle, D = t1/ t2


JA
JA