Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG6402LVT User Manual
Page 2
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
2 of 6
May 2013
© Diodes Incorporated
DMG6402LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.0
4.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
7.5
5.9
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.0
4.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6
4.8
A
Maximum Body Diode Forward Current (Note 5)
I
S
2 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
31 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.75
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
72
°C/W
t<10s 50
Thermal Resistance, Junction to Case (Note 5)
R
JC
23
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 1.5 2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
22 30
m
V
GS
= 10V, I
D
= 7A
32 42
V
GS
= 4.5V, I
D
= 5.6A
Forward Transfer Admittance
|Y
fs
|
10
S
V
DS
= 5V, I
D
= 7A
Diode Forward Voltage
V
SD
0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
498
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
52
Reverse Transfer Capacitance
C
rss
45
Gate Resistance
R
G
2.4
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
11.4
nC
V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A
Gate-Source Charge
Q
gs
1.4
Gate-Drain Charge
Q
gd
2
Turn-On Delay Time
t
D(on)
3.4
nS
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
Turn-On Rise Time
t
r
6.2
Turn-Off Delay Time
t
D(off)
13.9
Turn-Off Fall Time
t
f
2.8
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.