Diodes DMG4822SSD - Manual (Page 5)

DMG4822SSD
Document number: DS35403 Rev. 2 - 2
5 of 7
www.diodes.com
February 2014
© Diodes Incorporated
DMG4822SSD
NEW PROD
UC
T
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
at
e
T
hr
e
sho
ld
V
o
ltag
e
GS
(t
h
)
Vth (V) @ I =1mA
D Vth (V) @ I =250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.8 Diode Forward Voltage vs. Current
I
, SOU
RCE CURR
ENT
(
V
)
S
V (V)@T =25°C
SD A
1
10
100
1000
10000
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
I
, D
R
AI
N L
E
AK
AGE
CURR
ENT
(
nA)
DS
S
I (nA) Ave @ 25°C
DSS
I (nA) Ave @ 85°C
DSS
I (nA) Ave @ 125°C
DSS
I (nA) Ave @ 150°C
DSS
10
100
1000
0 4 8 12 16 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
, J
UNCT
ION
CA
P
A
CIT
A
NCE (
pF
)
T
Ciss Ave(pF)
Coss Ave(pF)
Crss Ave(pF)
f=1MHz
0
2
4
6
8
10
0 2 4 6 8 10 12
Q - (nC)
G
Fig. 11 Gate Charge
V (
V
)
GS
V =15V, I =10A
DS D