Diodes DMG4800LSD User Manual
Dmg4800lsd, Product summary, Description
DMG4800LSD
Document number: DS31858 Rev. 6 - 2
1 of 6
March 2013
© Diodes Incorporated
DMG4800LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
max
I
D
max
T
A
= +25°C
30V
16mΩ @ V
GS
= 10V
9.8A
22mΩ @ V
GS
= 4.5V
8.4A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC
Converters
Features and Benefits
100% avalanche rated part
Low
R
DS(on)
- minimizes conduction losses
Low
Q
g
- minimizes switching losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case:
SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal
Connections
Indicator: See diagram
Terminals:
Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (approximate)
Ordering Information
(Note 4)
Part Number
Compliance Case
Packaging
DMG4800LSD-13
Standard
SO-8
2500 / Tape & Reel
DMG4800LSDQ-13
Automotive
SO-8
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”
Marking Information
Top View
Pin Configuration
Internal Schematic
D
2
S
2
G
2
D
1
S
1
G
1
N-Channel MOSFET
N-Channel MOSFET
Top View
Logo
Part no.
Year: “10” = 2010
“11” = 2011
1
4
8
5
G4800LD
YY WW
Xth week: 01 ~ 53
SO-8
Top View
e3