Diodes DMG4800LFG - Manual (Page 2)

DMG4800LFG
Document number: DS31785 Rev. 3 - 2
2 of 6
www.diodes.com
November 2009
© Diodes Incorporated
DMG4800LFG
NEW PROD
UC
T
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current TJ = 25°C I
DSS
- - 1.0 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.8 - 1.5 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R DS (ON)
-
11
15 17
24
m Ω
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance |Y fs | - 8 - S V DS = 10V, I D = 9A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
- 798 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 128 - pF
Reverse Transfer Capacitance C
rss
- 122 - pF
Gate Resistance R g
- 1.37 - Ω V DS =0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
- 9.47 - nC
V
GS
= 5V, V
DS
= 15V,
I
D
= 9A
Gate-Source Charge Q
gs
- 1.87 - nC
Gate-Drain Charge Q
gd
- 5.60 - nC
Turn-On Delay Time t
D(on)
- 5.03 - ns
V DD = 15V, V GEN = 10V,
R
L
= 15 Ω, R
G
= 6 Ω, I
D
= 1A
Turn-On Rise Time t
r
- 4.50 - ns
Turn-Off Delay Time t
D(off)
- 26.33 - ns
Turn-Off Fall Time t f
- 8.55 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
0 0.5 1 1.5 2
0
5
10
15
20
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
25
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
5
10
15
20
25
30
1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS