Diodes DMG4800LFG User Manual
Dmg4800lfg new prod uc t, Features, Mechanical data
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
1 of 6
November 2009
© Diodes Incorporated
DMG4800LFG
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
DFN3030-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
•
Polarity: See Diagram
•
Marking Information: See Page 5
•
Ordering Information: See Page 5
•
Weight: 0.0172 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±25
V
Drain Current (Note 3) Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
7.44
4.82
A
Pulsed Drain Current (Note 4)
I
DM
40 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 3)
P
D
0.94 W
Thermal Resistance, Junction to Ambient
R
θJA
133 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
TOP VIEW
Internal Schematic
TOP VIEW
1
2
3
4
8
7
6
5
5
6
7
8
4
3
2
1
G
S
S
S
D
BOTTOM VIEW
Pin Configuration
BOTTOM VIEW