Diodes DMG4496SSS - Manual (Page 2)

DMG4496SSS
Document number: DS32048 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4496SSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
10
6
A
Pulsed Drain Current (Note 7) I
DM
60 A
Avalanche Current (Notes 7 & 8) I
AR
8 A
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH E
AR
3.2 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
1.42 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
88.49 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
0.8 1.2 2.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
—
16
22 21.5
29
mΩ
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance |Y
fs
| — 11.7 — S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V
SD
— 0.70 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 493.5 — pF
V
DS
=15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 94.5 — pF
Reverse Transfer Capacitance C
rss
— 50.4 — pF
Gate Resistance R
g
— 2.86 — Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 4.7 —
nC
V
DS
= 15V, V
GS
= 4.5V, ID =10A
Total Gate Charge (V
GS
= 10V) Q
g
— 10.2 —
V
DS
= 15V, V
GS
= 10V, ID =10A Gate-Source Charge Q
gs
— 1.4 — nC
Gate-Drain Charge Q
gd
— 1.7 — nC
Turn-On Delay Time t
D(on)
— 4.76 — ns
V
GS
= 10V, V
Ds
= 15V,
R
G
= 6Ω, R
L
= 15Ω,
Turn-On Rise Time t
r
— 3.64 — ns
Turn-Off Delay Time t
D(off)
— 19.5 — ns
Turn-Off Fall Time t
f
— 4.9 — ns
Notes: 6. Device mounted on 1 in. 2 FR-4 board with 2oz. Copper, in a still air environment @ T
A
= +25°C. The value in any given application depends on the
user's specific board design.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.