Diodes DMG4468LFG - Manual (Page 2)

DMG4468LFG
Document number: DS31857 Rev. 2 - 2
2 of 6
www.diodes.com
October 2009
© Diodes Incorporated
DMG4468LFG
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±100 nA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.0 - 2.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
10
17 15
23.5
m Ω
V
GS
= 10V, I
D
= 11.6A
V GS = 4.5V, I D = 10A
Forward Transfer Admittance |Y
fs
| - 8 - S V
DS
= 10V, I
D
= 9A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
- 867 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 85 - pF
Reverse Transfer Capacitance C
rss
- 81 - pF
Gate Resistance R
g
- 1.39 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 18.85 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 11.6A
Gate-Source Charge Q
gs
- 2.59 - nC
Gate-Drain Charge Q
gd
- 6.15 - nC
Turn-On Delay Time t
D(on)
- 5.46 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.3 Ω, R
G
= 3 Ω,
I
D
= 1A
Turn-On Rise Time t
r
- 14.53 - ns
Turn-Off Delay Time t
D(off)
- 18.84 - ns
Turn-Off Fall Time t f
- 6.01 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
0
10
20
30
40
50
0 1 2 3 4 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
0 1 2 3 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS