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Dmg3418l advanced information advanced information, Maximum ratings, Thermal characteristics – Diodes DMG3418L User Manual

Page 2: Electrical characteristics, Dmg3418l

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DMG3418L

Document number: DS36366 Rev. 3 - 2

2 of 5

www.diodes.com

March 2014

© Diodes Incorporated

DMG3418L

ADVANCED INFORMATION

ADVANCED INFORMATION





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 5) T

A

= +25°C

T

A

= +70°C

I

D

4.0
3.1

A

Drain Current (Note 6)

Pulsed

I

DM

15 A



Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5) T

A

= +25°C

T

A

= +70°C

P

D

1.4
0.9

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

90 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

30

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

1 µA

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage

I

GSS

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

1.5 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS(ON)


25
30
50

60
70

150

m

Ω

V

GS

= 10V, I

D

= 4A

V

GS

= 4.5V, I

D

= 3A

V

GS

= 2.5V, I

D

= 2A

Source-Drain Diode Forward Voltage

V

SD

1.2 V

V

GS

= 0V, I

S

= 2.0A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

464.3

pF

V

DS

= 15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

49.5

pF

Reverse Transfer Capacitance

C

rss

43.8

pF

Total Gate Charge

Q

g

5.5

nC

V

GS

= 4.5V, V

DS

= 15V,

I

D

= 4A

Gate-Source Charge

Q

gs

1.1

Gate-Drain Charge

Q

gd

1.8

Turn-On Delay Time

t

D(on)

1.9

ns

V

DD

= 15V, V

GEN

= 10V,

R

GEN

= 3Ω, R

L

= 3.75Ω

Turn-On Rise Time

t

r

1.6

ns

Turn-Off Delay Time

t

D(off)

10.3

ns

Turn-Off Fall Time

t

f

2.0

ns

Notes:

5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.