Diodes DMN2990UFA - Manual (Page 4)

DMN2990UFA
Document number: DS35765 Rev. 3 - 2
4 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

V
,
G
A
T
E
T
HRES
HOL
D V
O
L
T
AGE (
V
)
GS
(T
H
)
V (V) @ I = 250µA
TH D
V (V) @ I = 1mA
TH D
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1 1.2
V (V) @ V = 0V, T = 25°C
SD GS A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
T
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
50
40
30
20
10
0
10 15 20 5 0
f = 1MHz
Ciss Ave (pF)
Coss Ave (pF)
Crss Ave (pF)
1
10
100
1000
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
E
AKAGE
CURRENT (
n
A)
DS
S
I (nA) Ave @ 25°C
DSS
I (nA) Ave @ 85°C
DSS
I (nA) Ave @ 125°C
DSS
I (nA) Ave @ 150°C
DSS
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1
Q - (nC)
Fig. 11 Gate Charge Characteristics
G
V = 10V
DS