Diodes DMN2501UFB4 User Manual
Page 4
DMN2501UFB4
Document number: DS35824 Rev. 3 - 2
4 of 6
August 2012
© Diodes Incorporated
DMN2501UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.05
0.15
0.25
0
0.10
0.20
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 1.0A
GS
D
V
=
V
I = 1A
GS
D
8.0
0.2
0.4
0.6
0.8
1.2
1.0
0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
0.3
0.6
0.9
1.2
1.5
1.0
2.0
0
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
1,000
0
2
4
6
8
10
12
14
16
18 20
100
10
1
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
C
iss
C
oss
C
rss
f = 1MHz
0
1
2
3
4
5
6
7
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V
= 10V
I =
A
DS
D
250m
0.01
0.1
1
10
100
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T
= 150°C
T = 25°C
J(max)
A
V
= 8V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ