Diodes DMN2300U - Manual (Page 3)

DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
3 of 7
www.diodes.com
July 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300U
0.001
0.01
0.1
1
R(
t)
, T
R
ANSI
ENT T
H
ERM
A
L
RESI
S
IT
A
NCE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
R (t) = r(t)*R
R = 220C/W
Duty Cycle, D = t1/t2
θ θ
θ
JA JA
JA
r(t) @ D=Single Pulse
r(t) @ D=0.005
r(t) @ D=0.01
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
r(t) @ D=0.01
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45 - 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
175
m
Ω
V GS = 4.5V, I D = 300mA
240 V
GS
= 2.5V, I
D
= 250mA
360 V
GS
= 1.8V, I
D
= 100mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 30mA
Diode Forward Voltage V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
- 64.3 - pF
V DS = 25V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 6.1 - pF
Reverse Transfer Capacitance C
rss
- 4.5 - pF
Gate Resistance R
g
- 70 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 1.6 - nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
- 0.2 - nC
Gate-Drain Charge Q
gd
- 0.2 - nC
Turn-On Delay Time t D(on)
- 3.5 - ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time t
r
- 2.8 - ns
Turn-Off Delay Time t
D(off)
- 38 - ns
Turn-Off Fall Time t f
- 13 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.