Diodes DMN2300U User Manual
Dmn2300u, Product summary, Description and applications
DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
1 of 7
July 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V
(BR)DSS
R
DS(on)
I
D
Max (Note 5)
20V
175m
Ω @ V
GS
= 4.5V
1.40A @ T
A
= 25
°C
240m
Ω @ V
GS
= 2.5V
1.20A @ T
A
= 25
°C
360m
Ω @ V
GS
= 1.8V
1.0A @ T
A
= 25
°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load
switch
Features and Benefits
•
On resistance <200m
Ω
•
Low Gate Threshold Voltage
•
Fast Switching Speed
•
“Lead Free”, RoHS Compliant (Note 1)
•
Halogen and Antimony Free. "Green" Device (Note 2)
•
ESD Protected Gate 2kV
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT23
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish – Matte Tin
•
Weight: 0.08 grams (approximate)
Ordering Information
(Note 3)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2300U-7 N2U
7
8
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code Y
Z
A
B
C D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT23
Top View
Top View
Equivalent Circuit
D
G
S
ESD PROTECTED TO 2kV
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
N2U
YM