Diodes DMN2300UFB - Manual (Page 2)

DMN2300UFB
Document number: DS35235 Rev. 1 - 2
2 of 6
www.diodes.com
May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 4)
T
A
= 85°C (Note 4)
T A = 25°C (Note 5)
I
D
1.32
0.94
1.78
A
Pulsed Drain Current (Note 6) I
DM
8 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
0.468 W
Power Dissipation (Note 5) P D
1.2 W
Thermal Resistance, Junction to Ambient (Note 4) R θJA 267 °C/W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 104 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45 - 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- - 175
m
Ω
V GS = 4.5V, I D = 300mA
- - 240 V
GS
= 2.5V, I
D
= 250mA
- - 360 V
GS
= 1.8V, I
D
= 100mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 30mA
Diode Forward Voltage V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
- 67.62 - pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 9.74 - pF
Reverse Transfer Capacitance C
rss
- 7.58 - pF
Gate Resistance R g
- 68.51 - Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
- 0.89 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 1A
Gate-Source Charge Q
gs
- 0.14 - nC
Gate-Drain Charge Q gd
- 0.16 - nC
Turn-On Delay Time t
D(on)
- 4.92 - ns
V
DS
= 10V, I
D
= 1A
V
GS
= 4.5V, R
G
= 6Ω
Turn-On Rise Time t
r
- 6.93 - ns
Turn-Off Delay Time t
D(off)
- 21.71 - ns
Turn-Off Fall Time t
f
- 10.62 - ns
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.