Diodes DMN2114SN - Manual (Page 2)

DMN2114SN
Document number: DS30829 Rev. 5 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
DMN2114SN
NEW PROD
UC
T
Fig. 1 Typical Output Characteristics
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = 25°C
A
3V, 3.5V, 4V, 5V
3.0V
2.5V
V = 1.5V
GS
2.0V
Fig. 2 Typical Transfer Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
Fig. 3 On-Resistance vs. Gate Voltage
0
0.05
0.1
0.15
0.2
0.25
0.3
0 2 4 6 8 10
V , GATE-SOURCE VOLTAGE (V)
GS
R
, S
T
A
T
IC
D
R
AI
N
-S
O
U
R
C
E,
O
N
-R
ESI
STNA
CE (
)
DS
(O
N)
Ω
I = 0.5A
D
I = 1.0A
D
Fig. 4 On-Resistance vs. Drain Current
0.01
0.1
1
0 1 2 3 4
I , DRAIN CURRENT (A)
D
R
, ST
A
T
IC
DRAI
N-
S
OURCE,
ON-
RESI
S
T
A
NCE (
)
DS
(O
N)
Ω
T = 25°C
J
2.5V
4.5V
Fig. 5 On-Resistance Variation with Temperature
0
0.05
0.1
0.15
0.2
0.25
0.3
-50 0 50 100 150
T , AMBIENT TEMPERATURE (°C)
A
R
, S
T
A
T
IC
DR
A
IN-
S
O
URC
E
, O
N
-
DS
(O
N)
R
E
SI
ST
AN
C
E (
)
Ω
I = 1.0A
D
V = 2.5V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.5A, 1A
D
Fig. 6 Gate Threshold Voltage vs. Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE T
H
RESHO
L
D VO
L
T
A
G
E (
V)
GS
(t
h
)
V = 10V
I = 1mA
DS
D