Diodes DMN2075UDW - Manual (Page 2)

DMN2075UDW
Document number: DS35542 Rev. 1 - 2
2 of 6
www.diodes.com
September 2011
© Diodes Incorporated
DMN2075UDW
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±8V V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.8
2.2
A
t<5s
T
A
= 25°C
T A = 70°C
I
D
3.1
2.5
A
Continuous Drain Current (Note 5) V GS = 2.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.6
2.1
A
t<5s
T
A
= 25°C
T
A
= 70°C
I
D
2.8
2.2
A
Pulsed Drain Current (10 μs pulse, Duty cycle = 1%)
I DM
20 A
Maximum Continuous Body Diode Current I
S
1.0 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
0.5 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
257 °C/W
t<5s 213 °C/W
Total Power Dissipation (Note 5) P
D
0.58 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
221 °C/W
t<5s 183 °C/W
Thermal Resistance, Junction to Case (Note 5) R θJC 65 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.4 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 40 48
mΩ
V
GS
= 4.5V, I
D
= 3A
- 45 59 V
GS
= 2.5V, I
D
= 2A
- 51 70 V
GS
= 1.8V, I
D
= 1A
- 68 100 V
GS
= 1.5V, I
D
= 1A
Forward Transfer Admittance |Y
fs
| - 13 - S V
DS
= 5V, I
D
= 3A
Diode Forward Voltage V SD
- 0.75 1.0 V V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 594.3 - pF
V DS = 10V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 64.5 - pF
Reverse Transfer Capacitance C
rss
- 57.7 - pF
Gate Resistance R
g
- 1.5 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 7.0 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3.6A
Gate-Source Charge Q
gs
- 0.9 - nC
Gate-Drain Charge Q
gd
- 1.4 - nC
Turn-On Delay Time t D(on)
- 7.4 - ns
V DD = 10V, V GS = 4.5V,
R
L
= 2.78 Ω, R
G
= 1.0 Ω
Turn-On Rise Time t
r
- 9.8 - ns
Turn-Off Delay Time t
D(off)
- 28.1 - ns
Turn-Off Fall Time t f
- 6.7 - ns
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.