Dmn2020lsn new prod uc t, Dmn2020lsn – Diodes DMN2020LSN User Manual
Page 3
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
3 of 6
August 2011
© Diodes Incorporated
DMN2020LSN
NEW PROD
UC
T
0
0.01
0.02
0.03
0.04
0.05
0.06
0
2
4
6
8
10
12
14
16
18
20
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
V
= 1.8V
GS
V
= 4.5V
GS
V
= 2.5V
GS
0
0.01
0.02
0.03
0.04
0
2
4
6
8
10
12
14
16
18
20
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRA
IN-
S
OURC
E
ON-
RESIS
T
A
NCE (
N
O
R
M
A
L
IZ
E
D)
DS
(O
N
)
V
= 2.5V
I = 150mA
GS
D
V
= 4.5V
I = 500mA
GS
D
0
0.01
0.02
0.03
0.04
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DR
AIN-
SOUR
CE ON-
R
E
S
IST
A
N
C
E (
)
DS
(O
N
)
Ω
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 5A
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE THRE
SHO
L
D
VO
L
T
AG
E (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
5
10
15
20
0.4
0.6
0.8
1
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A