Diodes DMN2020LSN User Manual
Dmn2020lsn new prod uc t, Features, Mechanical data
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
1 of 6
August 2011
© Diodes Incorporated
DMN2020LSN
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
ESD Protected Up To 2KV
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SC-59
•
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 2
•
Ordering Information: See Page 2
•
Weight: 0.014 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
Continuous
V
GSS
±12 V
Continuous Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
6.9
4.5
A
Pulsed Drain Current (Note 4)
I
DM
30 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Power Dissipation (Note 3)
P
D
0.61 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
R
θJA
204
°C /W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our websit
4. Repetitive rating, pulse width limited by junction temperature.
SC-59
TOP VIEW
Pin Out Configuration
TOP VIEW
EQUIVALENT CIRCUIT
Source
Gate
Protection
Diode
Gate
Drain
D
G
S
ESD PROTECTED TO 2kV