Dmn2015ufde – Diodes DMN2015UFDE User Manual
Page 4
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
4 of 6
July 2012
© Diodes Incorporated
DMN2015UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.005
0.015
0.020
0.010
0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
(O
N
)
Ω
V
=
V
I = 10A
GS
D
10
V
=
V
I = 5A
GS
D
4.5
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
°
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
10
1,000
0
5
10
15
20
f = 1MHz
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
50
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
V
= 10V
I =
A
DS
D
8.5
0.01
0.1
1
10
100
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= 12V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W