Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2015UFDE User Manual
Page 2
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
2 of 6
July 2012
© Diodes Incorporated
DMN2015UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.5
8.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
12.5
10.0
A
Continuous Drain Current (Note 6) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.4
7.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11.2
8.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
80 A
Maximum Body Diode Continuous Current
I
S
2.5 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
189
°C/W
t<10s 132
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
61
°C/W
t<10s 43
Thermal Resistance, Junction to Case (Note 6)
R
θJC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
—
— V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1
μA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.1 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
—
9.3 11.6
m
Ω
V
GS
= 4.5V, I
D
= 8.5A
11.4 15
V
GS
= 2.5V, I
D
= 8.5A
17 30
V
GS
= 1.8V, I
D
= 5A
24 50
V
GS
= 1.5V, I
D
= 3A
Forward Transfer Admittance
|Y
fs
|
— 11.3 — S
V
DS
= 10V, I
D
= 8.5A
Diode Forward Voltage
V
SD
— — 1.2 V
V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1779 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 175 — pF
Reverse Transfer Capacitance
C
rss
— 154 — pF
Gate Resistance
R
g
— 0.94 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 19.7 — nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 10V)
Q
g
— 45.6 — nC
Gate-Source Charge
Q
gs
— 2.9 — nC
Gate-Drain Charge
Q
gd
— 3.8 — nC
Turn-On Delay Time
t
D(on)
— 7.4 — ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8
Ω
Turn-On Rise Time
t
r
— 16.8 — ns
Turn-Off Delay Time
t
D(off)
— 43.6 — ns
Turn-Off Fall Time
t
f
— 10.9 — ns
Reverse Recovery Time
T
rr
— 8.6 — ns
I
F
= 8.5A, di/dt = 210A/
μs
Reverse Recovery Charge
Q
rr
— 3.7 — nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.