Diodes DMN2014LHAB - Manual (Page 4)

DMN2014LHAB
Document number: DS36441 Rev. 1 - 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN2014LHAB
ADVAN
CE I
N
F
O
RM
ATI
O
N
0 2 4 6 8 10 12 14 16 18 20
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
100
10
1,000
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Figure 8 Gate Charge
0
2
4
6
8
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
10
V = 10V
I = A
DS
D
6
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
0.001
r(t
),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
0.01
0.1
1
R (t) = r(t) * R
R = 100°C/W
Duty Cycle, D = t1/ t2
 

JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse